? semiconductor components industries, llc, 2000 october, 2000 rev. 2 1 publication order number: mbr3045st/d mbr3045st preferred device switchmode ? power rectifier . . . using the schottky barrier principle with a platinum barrier metal. this stateoftheart device has the following features: ? dual diode construction e terminals 1 and 3 may be connected for parallel operation at full rating ? 45 v blocking voltage ? low forward voltage drop ? guardring for stress protection ? 150 c operating junction temperature mechanical characteristics ? case: epoxy, molded ? weight: 1.9 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds ? shipped 50 units per plastic tube ? marking: b3045 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 45 v average rectified current per device (t c = 130 c) per diode i f(av) 30 15 a peak repetitive forward current, per diode (square wave, v r = 45 v, 20 khz) i frm 30 a nonrepetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60 hz) i fsm 150 a peak repetitive reverse current, per diode (2.0 s, 1.0 khz) i rrm 2.0 a storage temperature range t stg 65 to +175 c operating junction temperature t j 65 to +150 c peak surge junction temperature (forward current applied) t j(pk) 175 c voltage rate of change (rated v r ) dv/dt 10,000 v/ s device package shipping ordering information mbr3045st to220 http://onsemi.com to220ab case 221a style 6 50 units/rail 3 4 1 schottky barrier rectifier 30 amperes 45 volts 3 1 2, 4 2 preferred devices are recommended choices for future use and best overall value. marking diagram b3045 b3045 = device code
mbr3045st http://onsemi.com 2 thermal characteristics (per diode) characteristic symbol value unit thermal resistance, junction to case r q jc 1.5 c/w electrical characteristics (per diode) instantaneous forward voltage (note 1.) (i f = 30 amp, t c = 25 c) (i f = 30 amp, t c = 125 c) (i f = 20 amp, t c = 125 c) v f 0.76 0.72 0.60 volts instantaneous reverse current (note 1.) (v r = 45 volts, t c = 25 c) (v r = 45 volts, t c = 125 c) i r 0.2 40 ma 1. pulse test: pulse width = 300 m s, duty cycle 2.0% figure 1. typical forward voltage figure 2. typical reverse current 0.6 0 v f , instantaneous forward voltage (volts) 100 70 20 50 10 v r , reverse voltage (volts) 0 0.2 0.04 0.02 0.002 i f , instantaneous forward current (amps ) i 7.0 5.0 3.0 0.2 0.4 0.8 10 20 30 40 0.1 0.4 1.0 2.0 1.0 1.0 50 , reverse current (ma) r 4.0 2.0 10 20 100 40 200 t j = 125 c 100 c 25 c t j = 150 c 125 c 100 c 30 0.01 0.004 25 c 75 c
mbr3045st http://onsemi.com 3 figure 3. current derating, case figure 4. current derating, ambient figure 5. forward power dissipation 110 t c , case temperature ( c) 20 8.0 4.0 0 t a , ambient temperature ( c) 20 0 32 24 16 8.0 0 40 8.0 16 0 i f , average forward current (amps) 32 16 12 8.0 4.0 0 12 i i f(av) , average forward current (amps) 120 130 140 150 60 80 160 p 20 40 24 28 , average forward current (amps) f(av) 4.0 28 32 36 20 24 square wave dc square wave dc 16 12 24 32 28 28 20 12 4.0 100 120 140 , average power dissipation (watts) f(av) rated v r applied square wave dc rated voltage applied r jc = 1.5 c/w r ja = 16 c/w (with to-220 heat sink) r ja = 60 c/w (no heat sink) square wave dc t j = 125 c (capacitativeload) i pk i av 5.0 10 20 (resistiveload) i pk i av
mbr3045st http://onsemi.com 4 package dimensions to220 plastic case 221a09 issue aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j style 6: pin 1. anode 2. cathode 3. anode 4. cathode on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mbr3045st/d switchmode is a trademark of semiconductor components industries, llc. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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